Abstract
We have studied silicon tetrachloride hydrogenation in an rf (40.68 MHz) plasma and have determined the trichlorosilane yield as a function of the molar energy input, H2: SiCl4 molar ratio, and pressure. The highest trichlorosilane yield achieved is 60%, and the minimum energy input is 0.3 kW h per mole of SiHCl3.
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Grankov, I.V., Zakharov-Cherenkov, V.K., Ivanov, L.S., and Sivoshinskaya, T.I., Proizvodstvo poluprovodnikovogo kremniya za rubezhom (Foreign Manufacturing of Semiconductor Silicon), Moscow: TsNIItsvetmet Ekonomiki i Informatsii, 1983.
Zhigach, A.F. and Stasinevich, D.S., Khimiya gidridov (Chemistry of Hydrides), Leningrad: Khimiya, 1969.
Taylor, P.A., Purification Techniques and Analytical Methods for Gaseous and Metallic Impurities in High-Purity Silane, J. Cryst. Growth, 1988, vol. 89, pp. 28–38.
Wilson, J.M., Radley, J.A., and Neale, E.D., UK Patent 745698, 1956.
Radley, J.A. and Elliot, G., UK Patent 838275, 1960.
Eugen, M.S. and Schwartz, R., US Patent 4217334. 1980.
Iya, S.K., Production of Ultra-High-Purity Polycrystalline Silicon, J. Cryst. Growth, 1986, vol. 75, pp. 88–90.
Grankov, I.V. and Ivanov, L.S., Intensification of Polycrystalline Silicon Production, Tsvetn. Met., 1986, no. 6, pp. 60–64.
Sarma, K.R. and Rice, M.J., Jr., US Patent 4309259, 1985.
Karpov, A.P., Suris, A.L., and Shorin, S.N., Thermodynamic Analysis of Reduction of Chlorides, II Simpozium po plazmokhimii (II Symp. on Plasma Synthesis), Riga: Zinatne, 1975, vol. 2, pp. 178–181.
Sarma, K.R. and Chanley, C.S., US Patent 4542004, 1985.
Lerage, J.-L and Gerard, S., Fr. Patent 2530638, 1984.
Gusev, A.V., Devyatykh, G.G., Sukhkanov, A.Yu., et al., RF Patent 2142909, 1998.
Krasheninnikov, E.G., Rusanov, V.D., Sanyuk, S.V., and Fridman, A.A., Hydrogen Sulfide Dissociation in an RF Discharge, Zh. Tekh. Fiz., 1986, vol. 56, no. 6.
Krylov, V.A., Salganskii, Yu.M., and Chernova, O.Yu., High-Sensitivity Gas-Chromatographic Determination of Carbon and Hydrogen-Containing Impurities in Silicon Tetrachloride, Zh. Anal. Khim., 2001, vol. 56, no. 9, pp. 956–961.
Sivoshinskaya, T.I., Grankov, I.V., Shabalin, Yu.P., and Ivanov, L.S., Pererabotka tetrakhlorida kremniya, obrazuyushchegosya v proizvodstve poluprovodnikovogo kremniya (Recycling of Silicon Tetrachloride in Semiconductor Silicon Production), Moscow: TsNIItsvetmet Ekonomiki i Informatsii, 1989.
Wolf, E. and Teichmann, R., Zur Thermodynamik des Systems Si-Cl-H, Z. Anorg. Allg. Chem., 1980, vol. 460, pp. 65–80.
Sirtl, E., Hunt, L.P., and Sawyer, D.H., High Temperature Reactions in the Silicon-Hydrogen-Chlorine System, J. Electrochem. Soc., 1974, vol. 121, no. 7.
Huber, K.-P. and Herzberg, G., Molecular Spectra and Molecular Structure: IV. Constants of Diatomic Molecules, New York: Van Nostrand, 1979.
Rusanov, V.D. and Fridman, A.A., Fizika khimicheski aktivnoi plazmy (Physics of Reactive Plasma), Moscow: Nauka, 1984.
Raizer, Yu.P., Fizika gazovogo razryada (Physics of Gas Discharge), Moscow: Nauka, 1987.
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Original Russian Text © A.V. Gusev, R.A. Kornev, A.Yu. Sukhanov, 2006, published in Neorganicheskie Materialy, 2006, Vol. 42, No. 9, pp. 1123–1126.
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Gusev, A.V., Kornev, R.A. & Sukhanov, A.Y. Preparation of trichlorosilane by plasma hydrogenation of silicon tetrachloride. Inorg Mater 42, 1023–1026 (2006). https://doi.org/10.1134/S0020168506090172
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DOI: https://doi.org/10.1134/S0020168506090172