Abstract
A single-step method of filling the channels of single-walled carbon nanotubes with the melt of refractory GaSe is proposed and successfully implemented. The filled nanotubes are investigated by optical absorption spectroscopy, Raman spectroscopy, and X-ray photoelectron spectroscopy. It is found that charge transfer from the nanotube walls to embedded GaSe accompanied by lowering of the Fermi level in nanotubes occurs in the obtained nanocomposite; i.e., acceptor doping of nanotubes takes place.
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Original Russian Text © M.V. Kharlamova, 2013, published in Pis’ma v Zhurnal Eksperimental’noi i Teoreticheskoi Fiziki, 2013, Vol. 98, No. 5, pp. 309-315.
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Kharlamova, M.V. Novel approach to tailoring the electronic properties of single-walled carbon nanotubes by the encapsulation of high-melting gallium selenide using a single-step process. Jetp Lett. 98, 272–277 (2013). https://doi.org/10.1134/S0021364013180069
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DOI: https://doi.org/10.1134/S0021364013180069