Abstract
The properties of multilayer (up to 80 layers) nanoperiodic (period up to ~12 nm) Al2O3/Ge and Al2O3/Si/Ge/Si systems annealed in a nitrogen atmosphere at temperatures from 700 to 900°C are studied using transmission electron microscopy, X-ray techniques of photoelectron spectroscopy, diffractometry, and reflectometry, and optical methods of photoluminescence and Raman scattering. In Al2O3/Ge samples annealed at 700°C, the formation of Ge nanocrystals with a size of ~3 nm is detected, which disappear at 800–900°C, when nanocrystals of the Al6Ge5 semiconductor phase of large size (>100 nm) grow. The introduction of separating layers of Si (Al2O3/Si/Ge/Si) leads to the formation of nanocrystals of the SiGex alloy at a temperature of 800°C, above which the size of the crystallites of this phase is about ~3–4 nm. The data obtained using X-ray techniques are in good agreement with the results of high-resolution transmission electron microscopy and Raman spectroscopy. In the Al2O3/Ge samples, photoluminescence is observed at room temperature at ~2.1 eV, and in the Al2O3/Si/Ge/Si samples, there is an additional luminescence peak at ~1.4 eV. Hydrogenation of the samples by annealing in a hydrogen atmosphere at 500°C enhances the luminescence intensity.
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ACKNOWLEDGMENTS
The authors are grateful to N.V. Baidus, A.I. Belov, O.S. Molostova, and I.V. Samartsev (Lobachevsky State University of Nizhny Novgorod) for methodological assistance in heat treatments of the samples and in the PL measurements.
Funding
The study was supported by the Ministry of Science and Higher Education of the Russian Federation as part of Strategic Academic Leadership Program “Priority-2030.”
The study was carried out using equipment of the Center for Collective Use “Materials Science and Diagnostics in Advanced Technologies” of the Ioffe Physical—Technical Institute, Russian Academy of Sciences.
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Translated by S. Rostovtseva
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Ershov, A.V., Levin, A.A., Baidakova, M.V. et al. Structure, Morphology, Chemical Composition, and Optical Properties of Annealed Multilayer Ge/Al2O3 and Si/Ge/Si/Al2O3 Nanoperiodic Systems. J. Surf. Investig. 17 (Suppl 1), S378–S390 (2023). https://doi.org/10.1134/S102745102307011X
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DOI: https://doi.org/10.1134/S102745102307011X