Abstract
The state-of-the-art of the development of photodetectors and photoreceiving devices operating in the range of electromagnetic radiation 0.1–0.38 μm is presented. A review of the world achievements and tendencies in the development of this field of photoelectronics based on various semiconducting materials is presented. Main physical and engineering problems of the development of ultraviolet photodetector modules designed on the basis of the АIII-N compounds are considered.
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Original Russian Text © K.O. Boltar, I.D. Burlakov, V.P. Ponomarenko, A.M. Filachev, V.V. Salo, 2014, published in Uspekhi Prikladnoi Fiziki, 2014, Vol. 2, No. 6, pp. 623–634.
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Boltar, K.O., Burlakov, I.D., Ponomarenko, V.P. et al. Solid-state photoelectronics of the ultraviolet range (Review). J. Commun. Technol. Electron. 61, 1175–1185 (2016). https://doi.org/10.1134/S1064226916100041
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DOI: https://doi.org/10.1134/S1064226916100041