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Structural transitions in silicon induced by a femtosecond laser pulse: The role of an electron-hole plasma and phonon-phonon anharmonicity

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Abstract

It is shown by the methods of time-resolved self-reflection and linear reflection that irradiation of a silicon target by a 100-fs laser pulse induces successive structural transitions of the target material to new crystal and liquid metal phases, which can occur during the laser pulse or 0.1–103 ps after the pulse termination, depending on the excitation conditions. The thresholds of these structural transitions are determined, and “’soft” phonon modes involved in them are identified, which represent “hot” short-wavelength LA modes. The dynamics of the structural transitions in silicon in the time interval from 0.1 to 103 ps is described using the model of instability of phonon modes caused by an electron-hole plasma and intra-and intermode phonon-phonon anharmonic interactions

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Authors and Affiliations

  1. International Teaching and Research Laser Center, Moscow State University, Moscow, 119899, Russia

    S. I. Kudryashov & V. I. Emel’yanov

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  1. S. I. Kudryashov
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  2. V. I. Emel’yanov
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__________

Translated from Zhurnal Éksperimental’no\(\overset{\lower0.5em\hbox{$\smash{\scriptscriptstyle\smile}$}}{l}\) i Teoretichesko\(\overset{\lower0.5em\hbox{$\smash{\scriptscriptstyle\smile}$}}{l}\) Fiziki, Vol. 121, No. 1, 2002, pp. 113–128.

Original Russian Text Copyright © 2002 by Kudryashov, Emel’yanov.

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Kudryashov, S.I., Emel’yanov, V.I. Structural transitions in silicon induced by a femtosecond laser pulse: The role of an electron-hole plasma and phonon-phonon anharmonicity. J. Exp. Theor. Phys. 94, 94–107 (2002). https://doi.org/10.1134/1.1448612

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  • DOI: https://doi.org/10.1134/1.1448612

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