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Fermi level pinning and negative magnetoresistance in PbTe:(Mn, Cr)

  • Electronic and Optical Properties of Semiconductors
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Abstract

Fermi level pinning and persistent photoconductivity are observed in PbTe:(Mn, Cr) at T<35 K. The impurity level that pins the chemical potential level shifts toward the bottom of the conduction band with increasing manganese content. Negative magnetoresistance at low temperatures is observed. The magnitude of this effect amounts to about 30% at T=4.2 K. The effect is caused by the specific features of electron transport through the impurity band in a magnetic field.

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Authors and Affiliations

  1. Moscow State University, Vorob’evy gory, Moscow, 119899, Russia

    A. V. Morozov, A. E. Kozhanov, A. I. Artamkin & D. R. Khokhlov

  2. Chernovtsy Branch, Institute of Materials Science Problems, National Academy of Sciences of Ukraine, ul. Zhovtneva 5, Chernovtsy, 274001, Ukraine

    E. I. Slyn’ko & V. E. Slyn’ko

  3. Institute of Physics, Polish Academy of Sciences, Warsaw, 02-668, Poland

    W. D. Dobrovolski & T. Story

Authors
  1. A. V. Morozov
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  2. A. E. Kozhanov
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  3. A. I. Artamkin
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  4. E. I. Slyn’ko
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  5. V. E. Slyn’ko
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  6. W. D. Dobrovolski
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  7. T. Story
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  8. D. R. Khokhlov
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Translated from Fizika i Tekhnika Poluprovodnikov, Vol. 38, No. 1, 2004, pp. 30–33.

Original Russian Text Copyright © 2004 by Morozov, Kozhanov, Artamkin, E. Slyn’ko, V. Slyn’ko, Dobrovolski, Story, Khokhlov.

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Morozov, A.V., Kozhanov, A.E., Artamkin, A.I. et al. Fermi level pinning and negative magnetoresistance in PbTe:(Mn, Cr). Semiconductors 38, 27–30 (2004). https://doi.org/10.1134/1.1641128

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  • DOI: https://doi.org/10.1134/1.1641128

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