Abstract
Thin indium oxide films and In–Y–O films containing 0.7 to 3.6 at % Y have been grown by ionbeam sputtering of an indium target and a composite (indium + weighed amounts of yttrium) target in a mixture of argon and oxygen. The thin indium oxide films have a cubic crystal structure (sp. gr. Ia\(\bar 3\)). The incorporation of yttrium atoms into indium oxide leads to the formation of an amorphous structure in the as-grown films and an increase in their room-temperature electrical resistance by several orders of magnitude. Lowtemperature electrical resistance data indicate a change in conduction mechanism. High-temperature heat treatment of the thin In–Y–O films leads to the crystallization of their amorphous structure and an increase in their electrical resistance.
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Original Russian Text © Yu.E. Kalinin, O.V. Zhilova, I.V. Babkina, A.V. Sitnikov, V.A. Makagonov, O.I. Remizova, 2018, published in Neorganicheskie Materialy, 2018, Vol. 54, No. 9, pp. 936–942.
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Kalinin, Y.E., Zhilova, O.V., Babkina, I.V. et al. Effect of Heat Treatment on the Electrical Properties of Thin Yttrium-Doped In2O3 Films. Inorg Mater 54, 885–891 (2018). https://doi.org/10.1134/S0020168518090030
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DOI: https://doi.org/10.1134/S0020168518090030