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Effect of carbon vacancies on the electric resistivity of nonstoichiometric VC y vanadium carbide

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Abstract

The influence of the temperature, concentration, and distribution of structure vacancies of the carbon sublattice on the electric resistivity ρ of nonstoichiometric VC y vanadium carbide (0.66 ≤ y ≤ 0.875) has been studied in the temperature range of 300–1200 K. The symmetry and structure characteristics of the ordered V6C5 and V8C7 phases formed owing to low-temperature annealing on various sections of the homogeneity region of the VC y carbide. The dependence of the residual electric resistivity on the content of the disordered vanadium carbide is explained by the atom-vacancy interaction and the change in the carrier concentration in the homogeneity region of VC y .

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Authors and Affiliations

  1. Institute of Solid State Chemistry, Ural Division, Russian Academy of Sciences, Yekaterinburg, 620219, Russia

    A. I. Gusev

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  1. A. I. Gusev
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Correspondence to A. I. Gusev.

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Original Russian Text © A.I. Gusev, 2009, published in Pis’ma v Zhurnal Éksperimental’noĭ i Teoreticheskoĭ Fiziki, 2009, Vol. 90, No. 3, pp. 210–215.

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Gusev, A.I. Effect of carbon vacancies on the electric resistivity of nonstoichiometric VC y vanadium carbide. Jetp Lett. 90, 191–196 (2009). https://doi.org/10.1134/S0021364009150077

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  • DOI: https://doi.org/10.1134/S0021364009150077

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