Abstract
The curves of intracenter luminescence decay for Mn2+ ions in the Cd0.5Mn0.5Te semiconductor solid solution, obtained in a low-temperature experiment, have been simulated by the Monte Carlo method. The features of the kinetics of the 2-eV band in the time interval where significant nonexponentiality of relaxation at different points of the emission band profile manifests itself, as well the integral kinetics and energy relaxation, have been considered. Migration of ion excitations and concentration quenching (which was previously disregarded) are considered to be the main mechanisms determining the kinetic curve formation. It was established that excitation by 2.34-eV photons leads to both selective (intracenter) and band excitation of Mn2+ ions. Comparison of the results of numerical simulation and experiment showed that the characteristic values of the migration and quenching rates (W m and W q , respectively) are close in magnitude and W q, m ≈ 0.1/τ, where τ is the lifetime at the long-wavelength band wing with the exponential kinetics. The estimated quantum yield (0.56) indicates significant influence of the concentration quenching on the 2-eV luminescence quantum yield in Cd1 − x Mn x Te and Zn1 − x Mn x S crystals with a high concentration of Mn2+ ions.
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Original Russian Text © N.N. Vasil’ev, 2008, published in Optika i Spektroskopiya, 2008, Vol. 105, No. 2, pp. 274–280.
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Vasil’ev, N.N. Concentration quenching and migration of excitations in a bulk Cd0.5Mn0.5Te crystal. Opt. Spectrosc. 105, 251–256 (2008). https://doi.org/10.1134/S0030400X08080134
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DOI: https://doi.org/10.1134/S0030400X08080134