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Estimating the reliability of aluminum metallization of integrated circuits by accelerated electromigration testing at constant temperature

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Abstract

A technique for estimating the reliability of multilayer metallization of integrated circuits at constant temperature has been implemented and tested. Statistical processing of the data has been carried out and the main reliability parameters of conductors have been calculated. The main types of failure, which commonly arise upon electromigration testing at constant temperature, have been demonstrated and analyzed.

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Authors and Affiliations

  1. National Research University of Electronic Technology MIET, Moscow, Russia

    S. O. Safonov, A. A. Golishnikov & M. G. Putrya

  2. OAO Angstrem-T, Moscow, Russia

    S. O. Safonov & V. P. Bespalov

Authors
  1. S. O. Safonov
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  2. V. P. Bespalov
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  3. A. A. Golishnikov
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  4. M. G. Putrya
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Corresponding author

Correspondence to S. O. Safonov.

Additional information

Original Russian Text © S.O. Safonov, V.P. Bespalov, A.A. Golishnikov, M.G. Putrya, 2014, published in Izvestiya Vysshikh Uchebnykh Zavedenii. Elektronika, 2014, No. 3(107), pp. 21–29.

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Safonov, S.O., Bespalov, V.P., Golishnikov, A.A. et al. Estimating the reliability of aluminum metallization of integrated circuits by accelerated electromigration testing at constant temperature. Russ Microelectron 44, 453–459 (2015). https://doi.org/10.1134/S1063739715070148

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  • DOI: https://doi.org/10.1134/S1063739715070148

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