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Mass transfer of indium in the In-CdTe structure under nanosecond laser irradiation

  • Semiconductors and Dielectrics
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Abstract

The features of mass transfer of indium in high-resistance CdTe crystals under nanosecond irradiation of the In-CdTe structure by laser pulses have been studied and analyzed. The mass transfer coefficients are determined and the average transfer rate of the indium atoms in CdTe under irradiation is evaluated. It is assumed that the concentration diffusion of indium in CdTe and the transfer of impurity atoms by the front of the laser-induced shock wave are not dominant mechanisms of mass transfer under dynamic doping. The most probable process, which provides the formation of the inverse layer in the surface region of the CdTe crystal under nanosecond laser irradiation of the In film, is an transfer of interstitial In atoms due to the thermal fluctuation jumps under the action of the driving force of the thermoelastic stresses and temperature gradient.

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Authors and Affiliations

  1. Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, pr. Nauki 41, Kiev, 03028, Ukraine

    V. P. Veleshchuk, A. Baĭdullaeva, A. I. Vlasenko, V. A. Gnatyuk, B. K. Dauletmuratov & S. N. Levitskii

  2. Taras Shevchenko National University of Kyiv, ul. Volodymyrs’ka 64, Kiev, 01601, Ukraine

    O. V. Lyashenko

  3. Research Institute of Electronics, Shizuoka University, Hamamatsu, Japan

    T. Aoki

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  1. V. P. Veleshchuk
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  2. A. Baĭdullaeva
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  3. A. I. Vlasenko
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  4. V. A. Gnatyuk
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  5. B. K. Dauletmuratov
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  6. S. N. Levitskii
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  7. O. V. Lyashenko
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  8. T. Aoki
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Correspondence to V. P. Veleshchuk.

Additional information

Original Russian Text © V.P. Veleshchuk, A. Baĭdullaeva, A.I. Vlasenko, V.A. Gnatyuk, B.K. Dauletmuratov, S.N. Levitskii, O.V. Lyashenko, T. Aoki, 2010, published in Fizika Tverdogo Tela, 2010, Vol. 52, No. 3, pp. 439–445.

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Veleshchuk, V.P., Baĭdullaeva, A., Vlasenko, A.I. et al. Mass transfer of indium in the In-CdTe structure under nanosecond laser irradiation. Phys. Solid State 52, 469–476 (2010). https://doi.org/10.1134/S1063783410030054

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