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Controlling graphite oxide bandgap width by reduction in hydrogen

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Abstract

Transformation of the chemical composition and electron structure of graphite oxide (GO) nanolayers as a result of their annealing in hydrogen has been studied by X-ray photoelectron spectroscopy using synchrotron radiation. It is established that both the chemical composition and bandgap width of GO can be controlled by varying the temperature and duration of heat treatment. By this means, the properties of GO nanolayers can be smoothly changed from dielectric to semiconductor.

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Authors and Affiliations

  1. Ioffe Physical Technical Institute, Russian Academy of Sciences, St. Petersburg, 194021, Russia

    V. M. Mikoushkin, V. V. Shnitov, S. Yu. Nikonov, A. T. Dideykin, S. P. Vul’, A. Ya. Vul’, D. A. Sakseev, D. V. Vyalikh & O. Yu. Vilkov

Authors
  1. V. M. Mikoushkin
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  2. V. V. Shnitov
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  3. S. Yu. Nikonov
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  4. A. T. Dideykin
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  5. S. P. Vul’
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  6. A. Ya. Vul’
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  7. D. A. Sakseev
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  8. D. V. Vyalikh
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  9. O. Yu. Vilkov
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Correspondence to V. M. Mikoushkin.

Additional information

Original Russian Text © V.M. Mikoushkin, V.V. Shnitov, S.Yu. Nikonov, A.T. Dideykin, S.P. Vul’, A.Ya. Vul’, D.A. Sakseev, D.V. Vyalikh, O.Yu. Vilkov, 2011, published in Pis’ma v Zhurnal Tekhnicheskoi Fiziki, 2011, Vol. 37, No. 20, pp. 1–8.

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Mikoushkin, V.M., Shnitov, V.V., Nikonov, S.Y. et al. Controlling graphite oxide bandgap width by reduction in hydrogen. Tech. Phys. Lett. 37, 942–945 (2011). https://doi.org/10.1134/S1063785011100257

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  • DOI: https://doi.org/10.1134/S1063785011100257

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