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A study of vacuum-ultraviolet stability of silicon photodiodes

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Abstract

Silicon photodiodes have been tested for resistance to vacuum-ultraviolet radiation at 121.6 nm. The responsivities of the p-n and n-p photodiodes under study were found to degrade by tens of percent at a VUV radiation dose on the order of tens of mJ/cm2. The effect of reversible photocurrent relaxation has been observed in detectors based on n-p structures.

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Authors and Affiliations

  1. Ioffe Physical Technical Institute, Russian Academy of Sciences, St. Petersburg, 194021, Russia

    V. V. Zabrodsky, V. P. Belik, P. N. Aruev, B. Ya. Ber, S. V. Bobashev, M. V. Petrenko & V. L. Sukhanov

Authors
  1. V. V. Zabrodsky
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  2. V. P. Belik
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  3. P. N. Aruev
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  4. B. Ya. Ber
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  5. S. V. Bobashev
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  6. M. V. Petrenko
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  7. V. L. Sukhanov
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Corresponding authors

Correspondence to V. V. Zabrodsky or M. V. Petrenko.

Additional information

Original Russian Text © V.V. Zabrodsky, V.P. Belik, P.N. Aruev, B.Ya. Ber, S.V. Bobashev, M.V. Petrenko, V.L. Sukhanov, 2012, published in Pis’ma v Zhurnal Tekhnicheskoi Fiziki, 2012, Vol. 38, No. 17, pp. 69–77.

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Zabrodsky, V.V., Belik, V.P., Aruev, P.N. et al. A study of vacuum-ultraviolet stability of silicon photodiodes. Tech. Phys. Lett. 38, 812–815 (2012). https://doi.org/10.1134/S1063785012090143

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  • DOI: https://doi.org/10.1134/S1063785012090143

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