Abstract
The SilSim3D program package is developed to conduct Monte Carlo simulations of the kinetics of growth, evaporation, and annealing of thin layers on solid substrates on the basis of an original algorithm of scheduling events on a real time scale. The model allows the simulation of various nanoelectronic technological processes in multicomponent physical and chemical systems of more than 107 particles in time intervals comparable with the actual experimental times. The initial stages of atomic layer deposition and the growth of silicon nanowhiskers are simulated as an example.
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References
J. V. Seiple, C. Ebner, and J. P. Pelz, Phys. Rev. B: Condens. Matter 53(23), 15 432–15 435 (1996).
V. M. Burlakov, G. A. D. Briggs, A. P. Sutton, and Y. Tsukahara, Phys. Rev. Lett. 86(14), 3052–3055 (2001).
M. Deminsky, A. Knizhnik, I. Belov, S. Umanskii, E. Rykova, A. Bagaturyants, B. Potapkin, M. Stoker, and A. Korkin, Surf. Sci. 549, 67–86 (2004).
I. M. Iskandarova, A. A. Knizhnik, I. V. Belov, E. A. Rykova, A. A. Bagatur’yants, S. Ya. Umanskii, B. V. Potapkin, and M. W. Stoker, Khim. Fiz. 26(3), 79–89 (2007) [Russ. J. Phys. Chem. B 1 (2), 102–112 (2007)].
I. G. Neizvestny, N. L. Shwartz, Z. Sh. Yanovitskaya, and A. V. Zverev, Comput. Phys. Commun. 147, 272–275 (2002).
A. V. Zverev, I. G. Neizvestny, A. V. Chemakin, N. L. Shwartz, and Z. Sh. Yanovitskaya, Mikroelektronika 33(1), 1–11 (2004) [Russ. Microelectron. 33 (3), 137–146 (2004)].
I. G. Neizvestny, N. L. Shwartz, Z. Sh. Yanovitskaya, and A. V. Zverev, Key Eng. Mater. 352, 5–8 (2007).
I. G. Neizvestny, N. L. Shwartz, Z. S. Yanovitskaya, and A. V. Zverev, Comput. Mater. Sci. 36, 36–41 (2006).
T. Suntola, Appl. Surf. Sci. 100/101, 391–398 (1996).
M. Leskela and M. Ritala, Thin Solid Films 409, 138–146 (2002).
J.-W. Lim, H.-S. Park, and S.-W. Kang, J. Electrochem. Soc. 148(6), C403–C408 (2001).
A. Satta, A. Vantomme, J. Shuhmacher, C. M. Whelan, V. Sutcliffe, and K. Maex, Appl. Phys. Lett. 84(22), 4571–4573 (2004).
J.-H. Kim, J.-Y. Kim, and S.-W. Kang, J. Appl. Phys. 97, 093 505 (2005).
D. M. Hausmann, P. de Rouffignac, A. Smith, R. Gordon, and D. Monsma, Thin Solid Films 443, 1 (2003).
J. Kikkawa, Y. Ohno, and S. Takeda, Appl. Phys. Lett. 86, 123 109 (2005).
L. Schubert, P. Werner, N. D. Zakharov, G. Gerth, F. M. Kolb, L. Long, U. Gosele, and T. Y. Tan, Appl. Phys. Lett. 84, 4968–4970 (2004).
E. I. Givargizov, Growth of Filamentary and Scaly Crystals from Vapor (Nauka, Moscow, 1977) [in Russian].
J. L. Liu, S. J. Cai, G. L. Jin, S. G. Thomas, and K. L. Wang, J. Cryst. Growth 200, 106–111 (1999).
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Original Russian Text © A.V. Zverev, K.Yu. Zinchenko, N.L. Shwartz, Z.Sh. Yanovitskaya, 2009, published in Rossiiskie nanotekhnologii, 2009, Vol. 4, Nos. 3–4.
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Zverev, A.V., Zinchenko, K.Y., Shwartz, N.L. et al. A Monte Carlo simulation of the processes of nanostructure growth: The time-scale event-scheduling algorithm. Nanotechnol Russia 4, 215–224 (2009). https://doi.org/10.1134/S1995078009030094
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DOI: https://doi.org/10.1134/S1995078009030094