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High performance silicene nanoribbon field effect transistors with current saturation

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Abstract

We investigate field effect transistors (FETs) based on semiconducting armchair-edged silicene nanoribbons (ASiNRs) by using ab initio quantum transport calculations. These FETs have high performance with an I on/I off ratio of over 106 and a subthreshold swing as small as 90 mV/decade. Impressively, the output characteristic shows a saturation behavior. The drain-current saturation is an advantage with respect to device speed, but it’s usually absent in carbon-based (e.g., graphene, graphene nanoribbons, carbon nanotubes, and organic single-molecule) FETs.

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Authors and Affiliations

  1. State Key Laboratory of Mesoscopic Physics and Department of Physics, Peking University, Beijing, 100871, P.R. China

    Hong Li, Qihang Liu, Jiaxin Zheng, Zhengxiang Gao, Junjie Shi & Jing Lu

  2. Academy for Advanced Interdisciplinary Studies, Peking University, Beijing, 100871, P.R. China

    Jiaxin Zheng

  3. Department of Physics, University of Nebraska at Omaha, Omaha, 68182-0266, Nebraska, USA

    Hong Li, Lu Wang, Jiaxin Zheng & Wai-Ning Mei

Authors
  1. Hong Li
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  2. Lu Wang
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  3. Qihang Liu
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  4. Jiaxin Zheng
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  6. Zhengxiang Gao
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  8. Jing Lu
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Correspondence to Jing Lu.

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Li, H., Wang, L., Liu, Q. et al. High performance silicene nanoribbon field effect transistors with current saturation. Eur. Phys. J. B 85, 274 (2012). https://doi.org/10.1140/epjb/e2012-30220-2

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  • DOI: https://doi.org/10.1140/epjb/e2012-30220-2

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