Structure and Optical Properties of InGaAsBi with up to 7% Bismuth

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Published 11 January 2012 ©2012 The Japan Society of Applied Physics
, , Citation Jan Devenson et al 2012 Appl. Phys. Express 5 015503 DOI 10.1143/APEX.5.015503

1882-0786/5/1/015503

Abstract

InyGa1-yAs1-xBix layers on InP:Fe (100) substrates have been grown by molecular beam epitaxy. Up to 7% of Bi incorporation has been confirmed by optical and structural analyses of grown samples. Photoluminescence signals at wavelengths up to 3 µm have been observed, implying InyGa1-yAs1-xBix to be a prospective material for mid-infrared applications. A weak band-gap temperature sensitivity of Bi-containing InGaAs has been evaluated from optical absorption measurements.

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10.1143/APEX.5.015503