Nitrogen-Oxygen Complexes as Shallow Donors in Silicon Crystals

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Copyright (c) 1986 The Japan Society of Applied Physics
, , Citation Masashi Suezawa et al 1986 Jpn. J. Appl. Phys. 25 L859 DOI 10.1143/JJAP.25.L859

1347-4065/25/10A/L859

Abstract

Optical absorption of silicon crystals involving nitrogen and oxygen is investigated at low temperature. New absorption lines are found and attributed to seven defect levels that act as shallow donors. The characteristics of the absorption lines are well described by the effective mass approximation. Five among these seven levels are related to complexes of nitrogen and oxygen atoms.

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10.1143/JJAP.25.L859