Growth of CuGaS2 Single Crystals by Traveling Heater Method

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Copyright (c) 1990 The Japan Society of Applied Physics
, , Citation Hideto Miyake and Koichi Sugiyama 1990 Jpn. J. Appl. Phys. 29 L1859 DOI 10.1143/JJAP.29.L1859

1347-4065/29/10A/L1859

Abstract

Growth of bulk CuGaS2 single crystals by the traveling heater method (THM) with In solvent has been investigated. The THM growth was performed at 1050°C, where the In solution saturated with stoichiometric CuGaS2 solute is a single liquid phase. The obtained single crystals were solid solutions CuGaxIn1-xS2, and the mole fraction 1-x of CuInS2 was 0.02–0.03 along the entire crystal length. The photoluminescence spectra show a weak near-band-edge emission peak and two strong and broad low-energy emission peaks.

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10.1143/JJAP.29.L1859