Abstract
Growth of bulk CuGaS2 single crystals by the traveling heater method (THM) with In solvent has been investigated. The THM growth was performed at 1050°C, where the In solution saturated with stoichiometric CuGaS2 solute is a single liquid phase. The obtained single crystals were solid solutions CuGaxIn1-xS2, and the mole fraction 1-x of CuInS2 was 0.02–0.03 along the entire crystal length. The photoluminescence spectra show a weak near-band-edge emission peak and two strong and broad low-energy emission peaks.