Abstract
The effectiveness of (NH4)2Sx treatment on the (100) surface of GaP, (Al, Ga)As, InP and InAs was studied in comparison to that on GaAs by means of Auger electron spectroscopy (AES) and reflection high-energy electron diffraction (RHEED). It was concluded that the existence of sulfur atoms bonded to semiconductors prevents the adsorption of oxygen. This phenomenon brings about the metal-dependent Schottky barrier fabricated on the (NH4)2Sx-treated surfaces, implying the reduction in the interface state density. The structure and effect of the (NH4)2Sx-treated surface of III-V compounds are qualitatively the same.
Export citation and abstract BibTeX RIS