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Universal Passivation Effect of (NH4)2Sx Treatment on the Surface of III-V Compound Semiconductors

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Copyright (c) 1991 The Japan Society of Applied Physics
, , Citation Haruhiro Oigawa et al 1991 Jpn. J. Appl. Phys. 30 L322 DOI 10.1143/JJAP.30.L322

1347-4065/30/3A/L322

Abstract

The effectiveness of (NH4)2Sx treatment on the (100) surface of GaP, (Al, Ga)As, InP and InAs was studied in comparison to that on GaAs by means of Auger electron spectroscopy (AES) and reflection high-energy electron diffraction (RHEED). It was concluded that the existence of sulfur atoms bonded to semiconductors prevents the adsorption of oxygen. This phenomenon brings about the metal-dependent Schottky barrier fabricated on the (NH4)2Sx-treated surfaces, implying the reduction in the interface state density. The structure and effect of the (NH4)2Sx-treated surface of III-V compounds are qualitatively the same.

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