Application of Ion-Beam-Sputtered Al Films to Ultrathin Surface Acoustic Wave Devices

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Copyright (c) 1993 The Japan Society of Applied Physics
, , Citation Atsushi Kamijo et al 1993 Jpn. J. Appl. Phys. 32 2346 DOI 10.1143/JJAP.32.2346

1347-4065/32/5S/2346

Abstract

Ion-beam sputtering technique has been applied to Al film deposition for electrodes in high-frequency surface acoustic wave devices. Al films having low resistivity and a smooth surface have been obtained, even in the ultrathin thickness range. It was shown that the ion-beam sputtering technique provided excellent thickness uniformity and controllability. This method was also applied to the deposition of highly preferred [111]-textured Al films.

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10.1143/JJAP.32.2346