Preparation of Bi-Based Ferroelectric Thin Films by Sol-Gel Method

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Copyright (c) 1995 The Japan Society of Applied Physics
, , Citation Tsutomu Atsuki et al 1995 Jpn. J. Appl. Phys. 34 5096 DOI 10.1143/JJAP.34.5096

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1 Metallurgy and New Material Division, Central Research Institute, Mitsubishi Materials Corporation, 1-297 Kitabukuro-cho, Omiya, Saitama 330, Japan

Dates

  1. Received 1 May 1995
  2. Accepted 13 July 1995

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Abstract

The effects of Bi/Ta and Sr/Ta mole ratios on ferroelectric properties of SrxBiyTa2Oz [ SBIT(x/y/2.0); 0.7≤x≤1.0, 2.0≤y≤2.6] thin-film capacitors were investigated. The SBIT films were grown by the sol-gel method using a spin-on coating on Pt/Ta/SiO2/Si and Pt/Ti/SiO2/Si substrates. The films were annealed at 800° C for one hour in oxygen atmosphere. Remanent polarization (Pr) depended strongly on the Sr/Ta mole ratio, and increased with decrease of the Sr/Ta mole ratio. On the other hand, Pr was almost independent of the Bi/Ta mole ratio. Scanning electron microscopy (SEM) images show that crystal grains grew with decrease of the Sr/Ta mole ratio. Electron probe micro analyzer (EPMA) analysis revealed that Bi content in SBIT films increased with decrease in Sr composition from stoichiometry.

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10.1143/JJAP.34.5096