Origin of Dielectric Relaxation Observed for Ba0.5Sr0.5TiO3 Thin-Film Capacitor

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Copyright (c) 1996 The Japan Society of Applied Physics
, , Citation Yukio Fukuda et al 1996 Jpn. J. Appl. Phys. 35 5178 DOI 10.1143/JJAP.35.5178

1347-4065/35/9S/5178

Abstract

In order to identify the origin of dielectric relaxation of Pt/Ba1-xSrxTiO3/Pt thin-film capacitors, effects of post-annealing in oxygen ambient on their electrical properties were investigated. From comparison of the electrical properties of as-deposited and post-annealed capacitors, it is concluded that electrons from oxygen vacancies in the interfacial depletion region are the origin of the phenomenon.

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10.1143/JJAP.35.5178