A 1.3-µm GaInNAs/GaAs Single-Quantum-Well Laser Diode with a High Characteristic Temperature over 200 K

, , , and

Copyright (c) 2000 The Japan Society of Applied Physics
, , Citation Takeshi Kitatani et al 2000 Jpn. J. Appl. Phys. 39 L86 DOI 10.1143/JJAP.39.L86

1347-4065/39/2A/L86

Abstract

We have obtained a high characteristic temperature (T0) of 215 K from a 1.3 µm GaInNAs/GaAs single-quantum-well laser under pulsed operation at 20°C to 80°C. To our knowledge, this T0 is the highest yet reported for 1.3 µm band edge emitters suitable for optical-fiber communication systems. The use of GaInNAs as an active layer is, therefore, very promising for the fabrication of long-wavelength laser diodes with excellent high-temperature performance.

Export citation and abstract BibTeX RIS

10.1143/JJAP.39.L86