AlGaN/GaN Heterostructure Metal-Insulator-Semiconductor High-Electron-Mobility Transistors with Si3N4 Gate Insulator

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Published 1 April 2003 Copyright (c) 2003 The Japan Society of Applied Physics
, , Citation Masaru Ochiai et al 2003 Jpn. J. Appl. Phys. 42 2278 DOI 10.1143/JJAP.42.2278

1347-4065/42/4S/2278

Abstract

AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors (MIS-HEMTs) using Si3N4 film as a gate insulator have been successfully fabricated. The gate leakage current decreased by about three orders of magnitude compared to that of the conventional AlGaN/GaN HEMTs without the Si3N4 gate insulator. The low-frequency noise of the MIS-HEMTs was smaller than that of the conventional HEMTs. Current collapse has also been suppressed in the MIS-HEMTs.

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10.1143/JJAP.42.2278