Abstract
Polycrystalline Pb(Zr, Ti)O3 (PZT) films were prepared on (111)Pt/TiO2/SiO2/Si substrates at 395°C by source-gas-pulsed-introduced metal-organic chemical vapor deposition (pulsed-MOCVD). The process window for obtaining the PZT single phase relative to the input source gas of lead was observed even at this low deposition temperature and became wider when the pressure of the reactor decreased from 670 to 67 Pa. This can be explained by the acceleration of the reevaporation of excess element of lead from the surface of the film. The width of the process window at 395°C and 67 Pa by pulsed-MOCVD was almost the same at 580°C and 670 Pa by conventional-source-gas-introduced MOCVD. The film deposited at 395°C showed good ferroelectricity with the remanent polarization value of 29 µC/cm2. As a result, a highly-reproducible PZT film deposition compatible with the deposition at 580°C and 670 Pa was obtained even for the 395°C and 67 Pa deposition by pulsed-MOCVD.