Low-Temperature Sintering of Microwave Dielectrics (Zn,Mg)TiO3

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Published 8 July 2005 • Copyright (c) 2005 The Japan Society of Applied Physics
, , Citation Ming-Liang Hsieh et al 2005 Jpn. J. Appl. Phys. 44 5045 DOI 10.1143/JJAP.44.5045

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1 Department of Electrical Engineering, I-Shou University, Kaohsiung, Taiwan, R.O.C.

2 Department of Electronic Engineering, I-Shou University, Kaohsiung, Taiwan, R.O.C.

3 National Nano Device Laboratories, Tainan Industrial Park, Tainan, Taiwan, R.O.C.

4 Department of Electrical Engineering, National Cheng Kung University, Tainan, Taiwan, R.O.C.

Dates

  1. Received 25 February 2005
  2. Accepted 24 March 2005
  3. Published

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Abstract

Dielectrics (Zn,Mg)TiO3, having a high dielectric constant and a near zero temperature coefficient of resonant frequency are promising materials for microwave applications. In this work, Bi2O3 was added to (Zn,Mg)TiO3 as a low-temperature-sintering dopant. The addition of Bi2O3 significantly improved the densification of (Zn,Mg)TiO3, which were densified below 1000°C. In addition, the decomposition temperature of (Zn,Mg)TiO3 increased as the magnesium substitution increased. Microwave dielectric properties of (Zn,Mg)TiO3 ceramics depend on crystalline structure. By properly adjusting the amount of magnesium, a small temperature coefficient of resonant frequency was obtained for (Zn,Mg)TiO3 dielectrics.

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10.1143/JJAP.44.5045