Characterization of MgxZn1-xO Films Grown by Remote-Plasma-Enhanced Metalorganic Chemical Vapor-Deposition using bis-Ethylcyclopentadienyl Magnesium

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Published 11 October 2005 Copyright (c) 2005 The Japan Society of Applied Physics
, , Citation Atsushi Nakamura et al 2005 Jpn. J. Appl. Phys. 44 7267 DOI 10.1143/JJAP.44.7267

This article is retracted by 2010 Jpn. J. Appl. Phys. 49 129201

1347-4065/44/10R/7267

Abstract

MgxZn1-xO films were successfully grown on a-plane sapphire (11bar 20) substrates by remote-plasma-enhanced metalorganic chemical vapor-deposition (RPE-MOCVD) using diethyl zinc (DEZn) and bis-ethylcyclopentadienyl magnesium (EtCp2Mg). By increasing magnesium content in the films, the crystal structure was shifted through a mixed state from wurtzite to rock salt. The optical band-gap of the films at nearly 3.28 eV was shifted to 3.69 eV by alloying with magnesium depending on the alloy composition. Both optical absorption edges and emission peaks of MgxZn1-xO films shifted to higher energy when the magnesium content at room temperature was increased, showing alloy broadening. The Stokes' shift of wurtzite MgxZn1-xO alloy films was quantitatively evaluated. The results are relevant to exciton localization.

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10.1143/JJAP.44.7267