Growth Evolution of ZrO2 from Deposited Zr Metal during Thermal Oxidation

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Published 6 October 2006 • Copyright (c) 2006 The Japan Society of Applied Physics
, , Citation Li-Zen Hsieh et al 2006 Jpn. J. Appl. Phys. 45 7680 DOI 10.1143/JJAP.45.7680

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Author affiliations

1 Department of Electrical Engineering, Chung-Cheng Institute of Technology, National Defense University, Tahsi, Taoyuan 335, Taiwan, R.O.C.

2 Department of Computer Science and Information Engineering, Nan Kai Institute of Technology, Caotun, Nantou 542, Taiwan, R.O.C.

3 Chung Shan Institute of Science and Technology, Lungtan, Taoyuan 325, Taiwan, R.O.C.

Dates

  1. Received 14 April 2006
  2. Accepted 15 June 2006
  3. Published

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Abstract

This work reveals how oxidation temperature affects the diffusion of Zr, the reaction behavior of oxygen and silicon atoms in the interior stacked layer structure and the corresponding crystalline phase of oxide. The depth distributions of the three important inclusive atoms Zr, O, and Si are experimentally determined.

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10.1143/JJAP.45.7680