Abstract
AlGaN/GaN/AlGaN double heterostructure field-effect transistors (DHFET) with high breakdown voltage and low on-resistance were fabricated on silicon substrates. A linear dependency of the breakdown voltage on the buffer thickness and on the buffer Aluminium concentration was found. A breakdown voltage as high as 830 V and an on-resistance as low as 6.2 Ω·mm were obtained in devices processed on 3.7 µm buffer thickness. The gate–drain spacing was 8 µm and the devices did not have any field plates.
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