Abstract
CdO films were prepared by a D–C reactive sputtering method with various sputtering voltages. The characters of the prepared films are compared with the reflection electron diffraction and X-ray diffraction patterns. Especially, the effects of the sputtering voltage and partial pressure of oxygen were investigated concerning the electron densities and the Hall mobilities. The observations on lattice parameters lead to the conclusion that CdO films with high carrier concentrations contain some amount of interstitial excess Cd atoms. The absorption edge variation of annealed films prepared by high voltage sputtering agrees with the theoretical curve which is accounted from the Fermi level shift caused by the change in carrier concentrations.