Abstract
Lasing oscillation from a GaAs1-xBix/GaAs semiconductor chip with a Fabry–Perot cavity is acheived for the first time by photo-pumping. The GaAs0.975Bi0.025 active layer was grown at a very low temperature of 350 °C by molecular beam epitaxy. The characteristic temperature of the laser was 83 K between 150 and 240 K. The lasing emission peak energy decreased at a constant rate of -0.18 meV/K, which is only 40% of the temperature coefficient of the GaAs band gap in this temperature range. Above 240 K, the lasing threshold pumping power increased sharply, and the lasing emission peak energy started shifting to a shorter wavelength.