Epitaxial Growth of FeSe0.5Te0.5 Thin Films on CaF2 Substrates with High Critical Current Density

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Published 9 May 2011 • ©2011 The Japan Society of Applied Physics
, , Citation Ichiro Tsukada et al 2011 Appl. Phys. Express 4 053101 DOI 10.1143/APEX.4.053101

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Author affiliations

1 Central Research Institute of Electric Power Industry, Yokosuka, Kanagawa 240-0196, Japan

2 Department of Basic Science, The University of Tokyo, Meguro, Tokyo 153-8902, Japan

3 High Intensity X-ray Diffraction Laboratory, Nagoya University, Nagoya 464-8603, Japan

4 Department of Crystalline Materials Science, Nagoya University, Nagoya 464-8603, Japan

5 JST, TRIP, Chiyoda, Tokyo 102-0075, Japan

Dates

  1. Received 29 March 2011
  2. Accepted 18 April 2011
  3. Published

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Abstract

In-situ epitaxial growth of FeSe0.5Te0.5 thin films is demonstrated on a nonoxide substrate CaF2. Structural analysis reveals that compressive stress is moderately added to 36-nm-thick FeSe0.5Te0.5, which pushes up the critical temperature to above 15 K, showing higher values than that of bulk crystals. The critical current density at T = 4.5 K reaches 5.9×104 A cm-2 at µ0H = 10 T, and 4.2×104 A cm-2 at µ0H = 14 T. These results indicate that fluoride substrates have high potential for the growth of iron-based superconductors in comparison with popular oxide substrates.

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10.1143/APEX.4.053101