Abstract
Few-layer graphene films were grown from spin-coated polystyrene films deposited on polycrystalline Ni substrates simply by heating in an Ar atmosphere. In this method, it is not necessary to use any reactive gas. Instead, the graphene film thickness is simply controlled by the initial thickness of the polystyrene film. This method of growing few-layer graphene film is safer and uses a much simpler apparatus than thermal chemical vapor deposition.