Abstract
We report on the critical thickness of AlN on SiC(0001). AlN was directly grown on 6H-SiC(0001) at 650 °C by rf-plasma-assisted molecular beam epitaxy. The growth layer had a relatively low threading dislocation density of 4×108–4×109 cm-2. Although the critical thickness of AlN on SiC(0001) is estimated to be 3.5 nm using a Matthews–Blakeslee model, the critical thickness in our experiment was over 700 nm. Low dislocation density, a layer-by-layer growth mode, and low growth temperature may contribute to such a large critical thickness. Sharp and intense free exciton emission was observed in low-temperature PL measurements of the AlN layer.
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