Abstract
ZnSe-Si and ZnSe-GaAs n-p heterojunctions are produced by rf-sputtering of ZnSe onto single crystal wafers of Si and GaAs at 200°C. These sputtered diodes contain high resistivity ZnSe layers, and the SCLC is predominant in the forward current-voltage characteristics. Annealing the diodes in Zn vapour at 700°C for 1 hr results in the decrease of the SCLC, and the thermal emission current in series with tunneling current becomes predominant. A bias-temperature treatment of the sputtered diodes at 155°C in a forward bias condition is found to enhance their photovoltaic effects.