Abstract
Annealing studies on quenched bismuth have been carried out using electrical resistivity measurements in the temperature range from 77 K to 380 K. A recovery stage is observed between 230 K and 310 K. This stage must be caused by annihilation of vacancies. The migration energy of a vacancy, 0.30 eV, is determined by the slope change method in this stage. The activation energy of self-diffusion is estimated using a similar formula for typical metals and is found to be 0.66 eV (15.2 kcal/mol). The ratio between the activation energy of self-diffusion and the melting temperature is 27.9 cal/mol. This value is slightly lower than that for typical metals.