Abstract
A controllable method to supply solute elements into growth solutions during the growth was developed for the first time. DC electric current was passed through binary semiconductor compounds used as source materials of solute elements. The source compounds can be dissolved even into saturated solutions due to Peltier heating. In such a cource current-controlled (SCC) method, the composition of growing crystals can be controlled by an electric current passed through the source compounds. The SCC method is demonstrated for the liquid phase epitaxial growth of In1-xGaxAs using InAs and GaAs as source compounds.
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