Abstract
The shear piezoresistance coefficients π'66, π'16 and π'26 of p- and n- type silicon are plotted as a function of the crystal directions for orientations in the (100) plane. Silicon pressure and other mechanical sensors with a four-terminal gauge, such as a Hall effect-type device, utilizing the shear stress have been of much interest. The outputs of the sensors are proportional to the shear piezoresistance coefficient π'66.