Abstract
Epitaxial NbN/MgO/Si(GaAs or InP) MIS structures were prepared by the sputtering technique. Introduction of the interrupted-sputtering method facilitated the growth of epitaxial NbN/MgO/Si heterostructures for almost one monolayer MgO layer. GaAs and InP substrates, however, never fostered epitaxial overgrowth of NbN until the MgO layer became thicker than 3 nm. Diodes fabricated from these wafers exhibited good tunneling MIS Schottky characteristics.