Abstract
Epitaxial lateral overgrowth (ELO) of GaAs on SiO2 film was successfully performed by LPE. It was found that the lateral overgrowth on (111)B substrate was the slowest when the stripe opening in SiO2 film oriented in the <
10 > and equivalent directions, while it was the fastest when the stripe oriented in the <11
> and equivalent directions. In the latter case, a large lateral to vertical growth velocity ratio (up to 50) of epitaxial GaAs was achieved. RC etching revealed that the etch pit density in the lateral epitaxial GaAs was found to be extremely low.