Direct Observation of the Growth Process of Ag Thin Film on a Hydrogen-Terminated Si(111) Surface

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Copyright (c) 1992 The Japan Society of Applied Physics
, , Citation Masamichi Naitoh et al 1992 Jpn. J. Appl. Phys. 31 4018 DOI 10.1143/JJAP.31.4018

1347-4065/31/12R/4018

Abstract

Using a field emission scanning electron microscope (FE-SEM), we have observed the effects of the saturation of surface dangling bonds of Si(111) surfaces with atomic hydrogen upon Ag thin-film (∼10 monolayers) growth. In Ag deposition at high temperatures, we found that Ag islands grew to large sizes on a hydrogen-terminated surface compared with the results on the clean surface.

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10.1143/JJAP.31.4018