Abstract
Highly transparent and conductive zinc-stannate thin films, ZnSnO3, have been prepared by rf magnetron sputtering using a target composed of ZnO–SnO2 ( SnO2, 78 wt%). A resistivity as low as 4×10-3 Ω·cm and an average transmittance above 80% in the visible range were obtained for undoped zinc-stannate films deposited with substrate temperatures ranging from room temperature to 300°C. The zinc-stannate films were relatively more stable in an oxidizing environment at high temperatures than either ZnO or SnO2 films. In addition, thermal stability in a hydrogen environment was improved over SnO2 films, and chemical stability in both acidic and basic solutions was improved over ZnO films.