Click here to close this panel.
A. Atsushi Yamaguchi1, Takashi Manako1, Akira Sakai1, Haruo Sunakawa1, Akitaka Kimura2, Masaaki Nido2 and Akira Usui Akira Usui2
Copyright (c) 1996 The Japan Society of Applied Physics
,
,
Citation A. Atsushi Yamaguchi et al 1996 Jpn. J. Appl. Phys. 35 L873
DOI 10.1143/JJAP.35.L873
38 Total downloads
Hexagonal GaN ( h-GaN) films are grown on GaAs (100) vicinal substrates by hydride vapor phase epitaxy. The substrate misorientation dependence of the crystal structure is investigated by X-ray diffraction measurements using a 4-circle diffractometer. It is found that misorientation toward the <111> B direction is essential for the growth of single domain h-GaN films and that the c-axis of the single domain h-GaN orients to the GaAs <111> B direction.
