IrO2/Pb(ZrxTi1-x)O3(PZT)/Pt Ferroelectric Thin-Film Capacitors Resistant to Hydrogen-Annealing Damage

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Copyright (c) 1997 The Japan Society of Applied Physics
, , Citation Keiko Kushida-Abdelghafar et al 1997 Jpn. J. Appl. Phys. 36 L1032 DOI 10.1143/JJAP.36.L1032

1347-4065/36/8A/L1032

Abstract

The PZT polarization hysteresis characteristics in a Pt/PZT/Pt ferroelectric capacitor are degraded by annealing in a hydrogen-containing atmosphere due to the catalytic effect of the top Pt electrode. This can be avoided by using an IrO2/PZT/Pt capacitor structure as we proposed. During hydrogen annealing of the as-grown capacitor, the top IrO2 electrode is deoxidized, degrading the capacitor characteristics. However, the polarization hysteresis characteristics are preserved after hydrogen annealing at 300° C if the IrO2/PZT/Pt capacitor is pre-annealed in oxygen at 600° C.

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