Abstract
Low-pressure metalorganic-vapor-phase epitaxy (MOVPE) growth properties of InAsBi, such as the relationship between the InBi composition and growth conditions, the growth conditions by which crystal with mirror-like surface can be obtained, and impurities in the InAsBi layer, are investigated. A mirror-like surface InAsBi layer with very high InBi content (3–4%) compared to the InBi solubility limit of 0.025% is obtained. On the other hand, surface morphologies with droplets, and with whiskers are observed when the growth conditions are not appropriate. In addition, the percentage of Bi substitutionally incorporated into InAs-zinc-blende lattice is evaluated for the first time. As for the impurities in the crystal, both the carbon and silicon in the InAsBi layer are below the detection limits, in spite of the low growth temperature of 365°C. Possible mechanisms dominating the alloy composition and the droplet formation are also discussed.