Crystal Direction of CdS Thin Film Produced by Laser Ablation

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Copyright (c) 1998 The Japan Society of Applied Physics
, , Citation Hisashi Sakai et al 1998 Jpn. J. Appl. Phys. 37 4149 DOI 10.1143/JJAP.37.4149

1347-4065/37/7R/4149

Abstract

The crystal direction of CdS thin films produced by the laser ablation was measured using X-ray diffractometer (XRD). The results reveal that the direction of the CdS crystal depends considerably on the substrate temperature and laser energy density. The c-axis of the CdS crystal changed from perpendicular to parallel with the surface as the laser energy density increased. The parallality of c-axis may be due to the clusters included in the laser plume. On the other hand, the c-axis changed from parallel to perpendicular as the substrate temperature increased. This phenomenon is considered to be that the clusters on the substrate melting and re-crystallizing at the film surface due to the high temperature prevailing during laser ablation.

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10.1143/JJAP.37.4149