Rate Equations for the Creation of Various Metastable Dangling Bonds in a-Si:H Mediated by Floating Bonds

and

Copyright (c) 1999 The Japan Society of Applied Physics
, , Citation Tatsuo Shimizu Tatsuo Shimizu and Minoru Kumeda Minoru Kumeda 1999 Jpn. J. Appl. Phys. 38 L911 DOI 10.1143/JJAP.38.L911

Download Article PDF

Article metrics

20 Total downloads

Share this article

Author affiliations

1 Department of Electrical and Computer Engineering,

2 Faculty of Engineering, Kanazawa University, Kodatsuno,

3 Kanazawa 920-8667, Japan

Dates

  1. Received 26 April 1999
  2. Accepted 28 June 1999

Buy this article in print

Journal RSS
Sign up for new issue notifications
1347-4065/38/8B/L911

Abstract

Using rate equations based on the creation and annihilation of a pair of a dangling bond and a floating bond and their interconversion, various metastable defect-creation processes in a-Si:H are quantitatively analyzed for the case of bandgap-light irradiation, electron-beam irradiation and thermal quenching from elevated temperatures. It is found that the calculated results can reproduce most of the observed results.

Export citation and abstract BibTeX RIS

Previous article in issue
Next article in issue
10.1143/JJAP.38.L911