Abstract
The pinning effect of punched-out dislocations in carbon-, nitrogen- or boron-doped Czochralski-grown silicon wafers was investigated using an indentation method. The size of a rosette pattern which corresponds to the distance of dislocation movement was measured after heat-treatment without any thermal stress. It was found that the rosette size decreased by carbon, nitrogen and boron doping with a concentration of 2.0×1016–1.4×1017, 5.3×1013–5.3×1014 and 2.0×1018–2.0×1019 atoms/cm3, respectively. The rosette size was approximately proportional to the power -1/3 of carbon, -1/10 of nitrogen and -1/10 of boron concentration, which differed from the reported power of -2/3 of oxygen concentration.
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