Abstract
Direct growth of metamorphic structure of high quality InP layers on GaAs substrates by metalorganic vapor phase epitaxy is presented. The quality of the top InP layer is strongly affected by the growth temperatures, group III and V partial pressure ratios and peripheral environment parameters control. A growth window that has successfully suppressed the numerous dislocations and rough surface as a result of the large lattice mismatch between InP and GaAs is obtained. Only 400 nm thick InP buffer layer compared with that of previous reports of 2 µm thick is qualified to obtain low dislocations and defects, high crystal quality, and uniform and specular surface morphologies. The material quality measured by photoluminescence is even better than that of InP substrates. In addition, the 2.8 nm surface roughness is lower than that of previous reports of 11.1 nm.