Thermoelectric Properties of (ZnO)5In2O3 Single Crystal Grown by a Flux Method

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Published 16 January 2004 • Copyright (c) 2004 The Japan Society of Applied Physics
, , Citation Oleg Malochkin et al 2004 Jpn. J. Appl. Phys. 43 L194 DOI 10.1143/JJAP.43.L194

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Author affiliations

1 Department of Applied Chemistry, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603, Japan

2 Korea Institute of Ceramic Engineering and Technology, 223-5 Gasan-Dong, Guemcheon-Gu, Seoul 153-801, Korea

3 CREST, Japan Science and Technology Agency, Kawaguchi Center Building, 4-1-8 Honcho, Kawaguchi 332-0012, Japan

Dates

  1. Received 23 October 2003
  2. Accepted 28 November 2003
  3. Published

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Abstract

Single crystals of (ZnO)5In2O3 were grown by a flux method, and their thermoelectric properties were evaluated for the first time. The in-plane electrical conductivity was found to be highly anisotropic in the single crystal, that is, about two orders of magnitude larger than that along the c-axis. The resulting power factor of the single crystal along the ab-plane was enhanced due to the enhanced electrical conductivity compared with that for textured ceramics with almost full density. The effect of grain boundaries on thermoelectric performance is discussed.

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10.1143/JJAP.43.L194